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Energetic radioactive ion beam studies of hydrogen in semiconductors

Detalles Bibliográficos
Autores principales: Forkel-Wirth, Doris, Achtziger, N, Burchard, A
Lenguaje:eng
Publicado: 1994
Materias:
Acceso en línea:http://cds.cern.ch/record/298218
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author Forkel-Wirth, Doris
Achtziger, N
Burchard, A
author_facet Forkel-Wirth, Doris
Achtziger, N
Burchard, A
author_sort Forkel-Wirth, Doris
collection CERN
id cern-298218
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1994
record_format invenio
spelling cern-2982182019-09-30T06:29:59Zhttp://cds.cern.ch/record/298218engForkel-Wirth, DorisAchtziger, NBurchard, AEnergetic radioactive ion beam studies of hydrogen in semiconductorsDetectors and Experimental TechniquesCERN-ISC-94-27ISC-I-13oai:cds.cern.ch:2982181994
spellingShingle Detectors and Experimental Techniques
Forkel-Wirth, Doris
Achtziger, N
Burchard, A
Energetic radioactive ion beam studies of hydrogen in semiconductors
title Energetic radioactive ion beam studies of hydrogen in semiconductors
title_full Energetic radioactive ion beam studies of hydrogen in semiconductors
title_fullStr Energetic radioactive ion beam studies of hydrogen in semiconductors
title_full_unstemmed Energetic radioactive ion beam studies of hydrogen in semiconductors
title_short Energetic radioactive ion beam studies of hydrogen in semiconductors
title_sort energetic radioactive ion beam studies of hydrogen in semiconductors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/298218
work_keys_str_mv AT forkelwirthdoris energeticradioactiveionbeamstudiesofhydrogeninsemiconductors
AT achtzigern energeticradioactiveionbeamstudiesofhydrogeninsemiconductors
AT burcharda energeticradioactiveionbeamstudiesofhydrogeninsemiconductors