Cargando…

$\alpha$-emission channeling studies of the lattice site of oversized atoms implanted in Fe and Ni single crystals

Detalles Bibliográficos
Autores principales:	De Wachter, J H, Blässer, S, Hofsäss, H C, Jahn, S, Lindroos, M, Moons, R, Pattyn, H, Restle, M, Vantomme, A, Wahl, U, Van Duppen, P, Langouche, G
Lenguaje:	eng
Publicado:	1995
Materias:	Particle Physics - Phenomenology
Acceso en línea:	https://dx.doi.org/10.1016/0168-583X(95)00671-0 http://cds.cern.ch/record/302441

Ejemplares similares

Emission channeling studies of the lattice site of oversized alkali atoms implanted in metals
por: De Wachter, J H, et al.
Publicado: (1993)

Unusually large substitutional fraction for Fr implanted in Fe observed by emission channelling
por: Lindroos, M, et al.
Publicado: (1992)

Unusually large substitutional fraction for Fr implanted in Fe observed by emission channeling
por: Lindroos, M, et al.
Publicado: (1992)

$\alpha$-emission channeling investigations of the lattice location of Li in Ge
por: Wahl, U, et al.
Publicado: (1996)

Lattice location of ion-implanted radioactive dopants in compound semiconductors
por: Winter, S, et al.
Publicado: (1990)

Lattice site prevalence of ion implanted Li in GaAs
por: Winter, S, et al.
Publicado: (1990)

Lattice site and hyperfine field of Fr in Fe studied by nuclear orientation and emission channelling
por: Lindroos, M, et al.
Publicado: (1993)

Lattice sites and damage annealing of implanted Tm and Er in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice sites of ion implanted Li in indium antimonide
por: Hofsäss, H C, et al.
Publicado: (1994)

Lattice location of ion-implanted dopants in GaAs using radioactive probes
por: Winter, S, et al.
Publicado: (1989)

Lattice sites of ion-implanted Li in diamond
por: Restle, M, et al.
Publicado: (1995)

Emission channeling studies on the lattice location of lithium, sodium and rare earth isotopes in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1996)

Lattice location of ion implanted $^{8}$Li in Si studied by alpha emission channeling
por: Wahl, U, et al.
Publicado: (1992)

Lattice site changes of ion implanted $^{8}$Li in Si studied by alpha emission
por: Wahl, U, et al.
Publicado: (1992)

Emission channeling studies on the behavior of light alkali atoms in wide-band-gap semiconductors
por: Hofsäss, H C, et al.
Publicado: (1994)

Lattice sites and damage annealing of Er in low-dose implanted GaAs
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of transition metals in semiconductors
por: Correia, J G, et al.
Publicado: (1998)

Emission channeling lattice location experiments with short-lived isotopes
por: Amorim, L, et al.
Publicado: (2010)

The influence of oxygen on the lattice sites of rare earths in silicon
por: Wahl, U, et al.
Publicado: (2003)

Lattice location and stability of ion implanted Cu in Si
por: Wahl, U, et al.
Publicado: (2003)

Alpha emission channeling lattice location experiments of $^{8}$B
por: Wahl, U, et al.
Publicado: (2010)

Lattice sites and stability of implanted Er in FZ and CZ Si
por: Wahl, U, et al.
Publicado: (2003)

Direct Evidence for Tetrahedral Interstitial Er in Si
por: Wahl, U, et al.
Publicado: (2003)

Li on bond-center sites in Si
por: Wahl, U, et al.
Publicado: (1994)

Annealing behaviour of InP and GaP during and after heavy-ion implantation at different temperatures and doses
por: Jahn, S G, et al.
Publicado: (1993)

Emission channeling studies in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1992)

Er-O clustering and its influence on the lattice sites of Er in Si
por: Wahl, U, et al.
Publicado: (2003)

Annealing behavior of ZnTe investigated with $^{111}$Cd-emission channeling
por: Bharuth-Ram, K, et al.
Publicado: (1998)

Emission channeling
por: Winter, S, et al.
Publicado: (1992)

Lattice location of implanted Cu in highly doped Si
por: Wahl, U, et al.
Publicado: (2003)

Lattice location of transition metals and rare earths in semiconductors
por: Wahl, U, et al.
Publicado: (2001)

Emission channeling studies of implanted $^{167m}$Er in InP
por: Wahl, U, et al.
Publicado: (2003)

Direct evidence for implanted Fe on substitutional Ga sites in GaN
por: Wahl, U, et al.
Publicado: (2003)

Annealing behaviour of compound semiconductors after ion implantation investigated by emission-channeling and blocking
por: Jahn, S G, et al.
Publicado: (1990)

Site changes of ion-implanted Li in GaAs below 300 K
por: Lindner, G, et al.
Publicado: (1989)

Thermal stability of substitutional Ag in CdTe
por: Jahn, S G, et al.
Publicado: (1996)

Electron emission channeling with position-sensitive detectors
por: Wahl, U, et al.
Publicado: (2003)

Emission channeling studies on the lattice location of lithium, sodium and rare earth isotopes in semiconductors
por: Hofsäss, H C, et al.
Publicado: (1998)

Emission channeling study of annealing of radiation damage in heavy-ion implanted diamond
por: Quintel, H, et al.
Publicado: (1996)

Cannot write session to /tmp/vufind_sessions/sess_ho2l03bprf0rrkbi6aeutpjb85