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Highly polarized electron source by using InGaAs-GaAs strained-layer superlattice

Detalles Bibliográficos
Autores principales:	Omori, T, Kurihara, Y, Takeuchi, Y, Yoshioka, M, Nakanishi, T, Okumi, S, Tsubata, M, Tawada, M, Togawa, K, Tanimoto, Y, Takahashi, C, Baba, T, Mizuta, M
Lenguaje:	eng
Publicado:	1994
Materias:	Accelerators and Storage Rings
Acceso en línea:	http://cds.cern.ch/record/302594

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