Study of charge collection and noise in non-irradiated and irradiated silicon detectors

The large collection and noise were studied in non-irradiated and irradiated silicon detectors as a function of temperature (T), shaping time (0) and fluence , up to about 1,2 x 10(14) protons per cm2 for minimum-ionizing electrons yielded by a 106 Ru source. The noise of irradiated detectors is found to be dominted for short shaping times (¾50ns) by a series noise compo- nent, while for longer shaping times („80ns) a parallel noise component (correlated with the reverse current) prevails. For non-irradiated detectors, where the reverse current is three orders of magnetude smaller compared with irradiated detectors, the series noises dominates over the whole range of shaping times investigated (20-150ns). A signal degradation is observed for irradiated detectors. However, the signal ca be distinguished from noise, even after a fluence of about 1.2 x10(14) protons per cm2, at a temperature of 6øC and with a shaping time tipical of rge LHC inter-bunch crossing time (20-30ns). The measurements of the signal as a function of voltage shows that irradiated detectors depleted at 50% of the full depletion voltage can still provide a measurable signal-to-noise ratio.