Current-voltage and impedance characteristics of neutron irradiated silicon detectors at fluences up to $10^{16}n/cm^{2}$

समान संसाधन

• Study of current voltage characteristics of irradiated silicon detectors
  द्वारा: Bosetti, M, और अन्य
  प्रकाशित: (1994)
• Pulse Height of an n-side Silicon Microstrip Detector after Proton Irradiation with a Fluence of 1*10 15p/cm2
  द्वारा: Albiol, F, और अन्य
  प्रकाशित: (1996)
• Increase of the photoconductivity quantum yield in silicon irradiated by neutrons to extremely high fluences
  द्वारा: Vaitkus, Juozas V, और अन्य
  प्रकाशित: (2022)
• Pulse height of MIP's in an n-side silicon microstrip detector after proton irradiation with a fluence of $1 x 10^{15} p cm^{-2}$
  द्वारा: Gómez, A, और अन्य
  प्रकाशित: (1998)
• Voltage regulator for on-board CMS ECAL powering : selected DC tests on non-irradiated and high-fluence neutron-irradiated samples
  द्वारा: Wertelaers, P
  प्रकाशित: (2010)