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Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
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Lenguaje: | eng |
Publicado: |
1996
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Acceso en línea: | http://cds.cern.ch/record/313850 |
_version_ | 1780890253576372224 |
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author | Fourches, N T |
author_facet | Fourches, N T |
author_sort | Fourches, N T |
collection | CERN |
id | cern-313850 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1996 |
record_format | invenio |
spelling | cern-3138502019-09-30T06:29:59Zhttp://cds.cern.ch/record/313850engFourches, N TCharge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rateDetectors and Experimental Techniquesoai:cds.cern.ch:3138501996 |
spellingShingle | Detectors and Experimental Techniques Fourches, N T Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate |
title | Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate |
title_full | Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate |
title_fullStr | Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate |
title_full_unstemmed | Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate |
title_short | Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate |
title_sort | charge build-up by irradiation in metal oxide semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/313850 |
work_keys_str_mv | AT fourchesnt chargebuildupbyirradiationinmetaloxidesemiconductorstructuresatcryogenictemperaturesbasicmechanismsandinfluenceofdoseanddoserate |