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Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate

Detalles Bibliográficos
Autor principal: Fourches, N T
Lenguaje:eng
Publicado: 1996
Materias:
Acceso en línea:http://cds.cern.ch/record/313850
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author Fourches, N T
author_facet Fourches, N T
author_sort Fourches, N T
collection CERN
id cern-313850
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1996
record_format invenio
spelling cern-3138502019-09-30T06:29:59Zhttp://cds.cern.ch/record/313850engFourches, N TCharge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rateDetectors and Experimental Techniquesoai:cds.cern.ch:3138501996
spellingShingle Detectors and Experimental Techniques
Fourches, N T
Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
title Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
title_full Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
title_fullStr Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
title_full_unstemmed Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
title_short Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
title_sort charge build-up by irradiation in metal oxide semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/313850
work_keys_str_mv AT fourchesnt chargebuildupbyirradiationinmetaloxidesemiconductorstructuresatcryogenictemperaturesbasicmechanismsandinfluenceofdoseanddoserate