Cargando…

Charge build-up by irradiation in Metal Oxide Semiconductor structures at cryogenic temperatures: basic mechanisms and influence of dose and dose rate

Detalles Bibliográficos
Autor principal:	Fourches, N T
Lenguaje:	eng
Publicado:	1996
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/313850

Ejemplares similares

Charge collection efficiency of irradiated silicon detectors operated at cryogenic temperatures
por: Borer, K, et al.
Publicado: (1999)

Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
por: Da Vià, C, et al.
Publicado: (1999)

Cryogenic Semiconductor Detectors: Simulation of Signal Formation & Irradiation Beam Test
por: Alexopoulos, Andreas
Publicado: (2015)

Evidence for charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
por: Palmieri, V G, et al.
Publicado: (1998)

Low dose-rate irradiation set-up for scintillating crystals
por: D'Ambrosio, C, et al.
Publicado: (1996)

Silicon detectors irradiated "in situ" at cryogenic temperatures
por: Ruggiero, G, et al.
Publicado: (2002)

Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
por: Bartalini, P, et al.
Publicado: (1999)

Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures
por: Borer, K, et al.
Publicado: (1999)

France:: Neutron irradiation at cryogenic temperatures for the LHC project
Publicado: (1998)

Charge collection efficiency of an irradiated cryogenic double-p silicon detector
por: Borer, L, et al.
Publicado: (2000)

Charge Transport Mechanisms of Black Diamond at Cryogenic Temperatures
por: Orsini, Andrea, et al.
Publicado: (2022)

A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures
por: Santocchia, A, et al.
Publicado: (2003)

Neutron Irradiation Tests of Calibrated Cryogenic Sensors at Low Temperatures
por: Junquera, T, et al.
Publicado: (1997)

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
por: Casagrande, L, et al.
Publicado: (1998)

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures
por: Casagrande, L, et al.
Publicado: (1999)

Irradiated silicon detectors operated at cryogenic temperatures: the Lazarus effect
por: Granata, V, et al.
Publicado: (2000)

Interdefect charge exchange in silicon particle detectors at cryogenic temperatures
por: MacEvoy, B, et al.
Publicado: (2002)

An enhanced device simulation of heavily irradiated silicon detectors at cryogenic temperatures
por: Moscatelli, F, et al.
Publicado: (2004)

Irradiation of Radiation-Tolerant Single-Mode Optical Fibers at Cryogenic Temperature
por: Blanc, Jeremy, et al.
Publicado: (2017)

Cryogenic semiconductor high-intensity radiation monitors
por: Palmieri, V G, et al.
Publicado: (2003)

Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe
por: Li, Yan, et al.
Publicado: (2021)

On Practical Charge Injection at the Metal/Organic Semiconductor Interface
por: Kumatani, Akichika, et al.
Publicado: (2013)

Irradiation of quench protection diodes at cryogenic temperatures in a nuclear research reactor
por: Hagedorn, Dietrich, et al.
Publicado: (1995)

Comprehensive device Simulation modeling of heavily irradiated silicon detectors at cryogenic temperatures
por: Moscatelli, F, et al.
Publicado: (2004)

Observation of dose-rate dependence in a Fricke dosimeter irradiated at low dose rates with monoenergetic X-rays
por: O’Leary, Mel, et al.
Publicado: (2018)

Three-dimensional visualization of lithium metal anode via low-dose cryogenic electron microscopy tomography
por: Li, Xiangyan, et al.
Publicado: (2021)

The Dose and Dose-Rate Effects of Paternal Irradiation on Transgenerational Instability in Mice: A Radiotherapy Connection
por: Mughal, Safeer K., et al.
Publicado: (2012)

Semiconductors — basic data
por: Madelung, Otfried
Publicado: (1996)

Basic Semiconductor Physics
por: Hamaguchi, Chihiro
Publicado: (2010)

Basic semiconductor physics
por: Hamaguchi, Chihiro
Publicado: (2001)

Basic semiconductor physics
por: Hamaguchi, Chihiro
Publicado: (2017)

Continuous Low-Dose-Rate Irradiation Promotes Growth of Silkworms
por: Shibamoto, Yuta, et al.
Publicado: (2017)

VADER: a variable dose-rate external (137)Cs irradiator for internal emitter and low dose rate studies
por: Garty, Guy, et al.
Publicado: (2020)

Irradiation Tests at Cryogenic Temperatures on Diffusion Type Diodes for the LHC Superconducting Magnet Protection
por: Denz, R, et al.
Publicado: (1999)

Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures
por: Fourches, N T, et al.
Publicado: (1997)

Dose and Dose Rate-Dependent Effects of Low-Dose Irradiation on Inflammatory Parameters in ApoE-Deficient and Wild Type Mice
por: Glasow, Annegret, et al.
Publicado: (2021)

Surface Modification and Charge Injection in a Nanocomposite Of Metal Nanoparticles and Semiconductor Oxide Nanostructures
por: Xiao, Bo, et al.
Publicado: (2020)

Dose modification factors for (192)Ir high‐dose‐rate irradiation using Monte Carlo simulations
por: Kassas, Bassel, et al.
Publicado: (2006)

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation
por: Gupta, Siddharth, et al.
Publicado: (2022)

Report on physical properties of metals and alloys from cryogenic to elevated temperatures
por: Deem, Herbert W, et al.
Publicado: (1961)

Cannot write session to /tmp/vufind_sessions/sess_m48dnmpb4agqlgpu547c5h5nu7