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Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods
Autores principales: | , , |
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Lenguaje: | eng |
Publicado: |
1996
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/317675 |
_version_ | 1780890441201221632 |
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author | Wieteska, K Wierzchowski, W Graeff, W |
author_facet | Wieteska, K Wierzchowski, W Graeff, W |
author_sort | Wieteska, K |
collection | CERN |
id | cern-317675 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1996 |
record_format | invenio |
spelling | cern-3176752019-09-30T06:29:59Zhttp://cds.cern.ch/record/317675engWieteska, KWierzchowski, WGraeff, WLattice deformation studies in high energy ions implanted silicon by means of various X-ray methodsCondensed MatterJINR-E14-96-185oai:cds.cern.ch:3176751996-09-11 |
spellingShingle | Condensed Matter Wieteska, K Wierzchowski, W Graeff, W Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods |
title | Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods |
title_full | Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods |
title_fullStr | Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods |
title_full_unstemmed | Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods |
title_short | Lattice deformation studies in high energy ions implanted silicon by means of various X-ray methods |
title_sort | lattice deformation studies in high energy ions implanted silicon by means of various x-ray methods |
topic | Condensed Matter |
url | http://cds.cern.ch/record/317675 |
work_keys_str_mv | AT wieteskak latticedeformationstudiesinhighenergyionsimplantedsiliconbymeansofvariousxraymethods AT wierzchowskiw latticedeformationstudiesinhighenergyionsimplantedsiliconbymeansofvariousxraymethods AT graeffw latticedeformationstudiesinhighenergyionsimplantedsiliconbymeansofvariousxraymethods |