Cargando…

Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology

Detalles Bibliográficos
Autores principales: Santiard, Jean-Claude, Faccio, F
Lenguaje:eng
Publicado: 1996
Materias:
Acceso en línea:http://cds.cern.ch/record/318947
_version_ 1780890531887316992
author Santiard, Jean-Claude
Faccio, F
author_facet Santiard, Jean-Claude
Faccio, F
author_sort Santiard, Jean-Claude
collection CERN
id cern-318947
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1996
record_format invenio
spelling cern-3189472019-09-30T06:29:59Zhttp://cds.cern.ch/record/318947engSantiard, Jean-ClaudeFaccio, FNoise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technologyDetectors and Experimental Techniquesoai:cds.cern.ch:3189471996
spellingShingle Detectors and Experimental Techniques
Santiard, Jean-Claude
Faccio, F
Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
title Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
title_full Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
title_fullStr Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
title_full_unstemmed Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
title_short Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
title_sort noise and speed characteristics of test transistors and charge amplifiers designed using a submicron cmos technology
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/318947
work_keys_str_mv AT santiardjeanclaude noiseandspeedcharacteristicsoftesttransistorsandchargeamplifiersdesignedusingasubmicroncmostechnology
AT facciof noiseandspeedcharacteristicsoftesttransistorsandchargeamplifiersdesignedusingasubmicroncmostechnology