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Nobel Symposium 99: Heterostructures in Semiconductors

Detalles Bibliográficos
Autor principal: Grimmeiss, H G
Lenguaje:eng
Publicado: 1996
Materias:
Acceso en línea:http://cds.cern.ch/record/321736
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author Grimmeiss, H G
author_facet Grimmeiss, H G
author_sort Grimmeiss, H G
collection CERN
id cern-321736
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1996
record_format invenio
spelling cern-3217362021-04-22T21:20:02Z http://cds.cern.ch/record/321736 eng Grimmeiss, H G Nobel Symposium 99: Heterostructures in Semiconductors Condensed Matter 1996
spellingShingle Condensed Matter
Grimmeiss, H G
Nobel Symposium 99: Heterostructures in Semiconductors
title Nobel Symposium 99: Heterostructures in Semiconductors
title_full Nobel Symposium 99: Heterostructures in Semiconductors
title_fullStr Nobel Symposium 99: Heterostructures in Semiconductors
title_full_unstemmed Nobel Symposium 99: Heterostructures in Semiconductors
title_short Nobel Symposium 99: Heterostructures in Semiconductors
title_sort nobel symposium 99: heterostructures in semiconductors
topic Condensed Matter
url http://cds.cern.ch/record/321736
work_keys_str_mv AT grimmeisshg nobelsymposium99heterostructuresinsemiconductors