Radiation damage to neutron and proton irradiated GaAs particle detectors

The radiation damage in 200 um thick Schottky diodes made on semi-insulating (SI) undoped GaAs Liquid Encapsulated Czochralski (LEC) bulk material with resistivities between 0.4 and 8.9*10E7 Ohm*cm were studied using alpha-spectroscopy, signal response to minimum ionising particles (MIP), I-V and CV...

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Detalles Bibliográficos
Autores principales: Rogalla, M., Eich, T., Evans, N., Joost, S., Kienzle, M., Geppert, R., Goppert, R., Irsigler, R., Ludwig, J., Runge, K., Schmid, T.
Lenguaje:eng
Publicado: 1997
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/323627

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