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An additional contribution in the noise spectrum of SOI MOSFETs

Detalles Bibliográficos
Autores principales: Faccio, F, Aspell, P, Jarron, Pierre, Heijne, Erik H M
Lenguaje:eng
Publicado: 1996
Materias:
Acceso en línea:http://cds.cern.ch/record/325103
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author Faccio, F
Aspell, P
Jarron, Pierre
Heijne, Erik H M
author_facet Faccio, F
Aspell, P
Jarron, Pierre
Heijne, Erik H M
author_sort Faccio, F
collection CERN
id cern-325103
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1996
record_format invenio
spelling cern-3251032019-09-30T06:29:59Zhttp://cds.cern.ch/record/325103engFaccio, FAspell, PJarron, PierreHeijne, Erik H MAn additional contribution in the noise spectrum of SOI MOSFETsDetectors and Experimental Techniquesoai:cds.cern.ch:3251031996
spellingShingle Detectors and Experimental Techniques
Faccio, F
Aspell, P
Jarron, Pierre
Heijne, Erik H M
An additional contribution in the noise spectrum of SOI MOSFETs
title An additional contribution in the noise spectrum of SOI MOSFETs
title_full An additional contribution in the noise spectrum of SOI MOSFETs
title_fullStr An additional contribution in the noise spectrum of SOI MOSFETs
title_full_unstemmed An additional contribution in the noise spectrum of SOI MOSFETs
title_short An additional contribution in the noise spectrum of SOI MOSFETs
title_sort additional contribution in the noise spectrum of soi mosfets
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/325103
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