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An additional contribution in the noise spectrum of SOI MOSFETs
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
1996
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/325103 |
_version_ | 1780890894527889408 |
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author | Faccio, F Aspell, P Jarron, Pierre Heijne, Erik H M |
author_facet | Faccio, F Aspell, P Jarron, Pierre Heijne, Erik H M |
author_sort | Faccio, F |
collection | CERN |
id | cern-325103 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1996 |
record_format | invenio |
spelling | cern-3251032019-09-30T06:29:59Zhttp://cds.cern.ch/record/325103engFaccio, FAspell, PJarron, PierreHeijne, Erik H MAn additional contribution in the noise spectrum of SOI MOSFETsDetectors and Experimental Techniquesoai:cds.cern.ch:3251031996 |
spellingShingle | Detectors and Experimental Techniques Faccio, F Aspell, P Jarron, Pierre Heijne, Erik H M An additional contribution in the noise spectrum of SOI MOSFETs |
title | An additional contribution in the noise spectrum of SOI MOSFETs |
title_full | An additional contribution in the noise spectrum of SOI MOSFETs |
title_fullStr | An additional contribution in the noise spectrum of SOI MOSFETs |
title_full_unstemmed | An additional contribution in the noise spectrum of SOI MOSFETs |
title_short | An additional contribution in the noise spectrum of SOI MOSFETs |
title_sort | additional contribution in the noise spectrum of soi mosfets |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/325103 |
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