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Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology
Autores principales: | , , , , , |
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Lenguaje: | eng |
Publicado: |
1997
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/325854 |
_version_ | 1780890928160964608 |
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author | Battistoni, G Camin, D V Fedyakin, N N Pessina, G Sabatini, F Sala, P R |
author_facet | Battistoni, G Camin, D V Fedyakin, N N Pessina, G Sabatini, F Sala, P R |
author_sort | Battistoni, G |
collection | CERN |
id | cern-325854 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1997 |
record_format | invenio |
spelling | cern-3258542019-09-30T06:29:59Zhttp://cds.cern.ch/record/325854engBattistoni, GCamin, D VFedyakin, N NPessina, GSabatini, FSala, P RRealisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technologyDetectors and Experimental TechniquesINFN-TC-97-02oai:cds.cern.ch:3258541997-01-07 |
spellingShingle | Detectors and Experimental Techniques Battistoni, G Camin, D V Fedyakin, N N Pessina, G Sabatini, F Sala, P R Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology |
title | Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology |
title_full | Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology |
title_fullStr | Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology |
title_full_unstemmed | Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology |
title_short | Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology |
title_sort | realisation of reliable cryogenic asics using gaas ion-implanted mesfet technology |
topic | Detectors and Experimental Techniques |
url | http://cds.cern.ch/record/325854 |
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