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Realisation of reliable cryogenic ASICs using GaAs ion-implanted MESFET technology

Detalles Bibliográficos
Autores principales:	Battistoni, G, Camin, D V, Fedyakin, N N, Pessina, G, Sabatini, F, Sala, P R
Lenguaje:	eng
Publicado:	1997
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/325854

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