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Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a $1.25 barrier height was measured, via two electrical methods, to be $0.81\pm0.005$ and $0.85\pm0.01$~eV and a space charge density of $2.8 \pm 0.2 \tim...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1997
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(98)00141-7 http://cds.cern.ch/record/333483 |