Cargando…

RD9 final status report: a demonstrator analog signal processing circuit in a radiation hard SOI-CMOS technology

Detalles Bibliográficos
Autores principales:	Heijne, Erik H M, Jarron, Pierre, Anghinolfi, Francis, Aspell, P, Campbell, M, Faccio, F, Kaplon, J, Lemeilleur, F, Snoeys, W, Borgeaud, P, Delagnes, E, Dentan, M F, Lugiez, F, Rouger, M, Borel, G, Redolfi, J, Brice, J M, Dabrowski, W
Lenguaje:	eng
Publicado:	1997
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/336523

Ejemplares similares

Status report RD9: a demonstrator analog signal processing circuit in a radiation hard SOI-CMOS technology
por: Anghinolfi, Francis, et al.
Publicado: (1992)

A fast, low power CMOS amplifier on SOI for sensor applications in a radiation environment of up to 20 Mrad(Si)
por: Aspell, P, et al.
Publicado: (1996)

Noise characterization of transistors in a 1.2 $\mu$m CMOS-SOI technology up to a total dose of 12 Mrad (SI)
por: Faccio, F, et al.
Publicado: (1994)

Study of a radiation hard SOI-CMOS technology for mixed analog-digital IC design for applications in LHC
por: Aspell, P, et al.
Publicado: (1995)

An additional contribution in the noise spectrum of SOI MOSFETs
por: Faccio, F, et al.
Publicado: (1996)

A demonstrator analog signal processing circuit in a radiation hard SOI-CMOS technology
por: Anghinolfi, Francis, et al.
Publicado: (1990)

Development of front-end electronics for silicon strip detectors using the DMILL BiCMOS Rad-hard process
por: Anghinolfi, Francis, et al.
Publicado: (1996)

Analog performance of SOI MOSFETs up to 25 Mrad (Si)
por: Faccio, F, et al.
Publicado: (1995)

A demonstrator analog signal processing circuit in a radiation hard SOI-CMOS technology: summary
por: Anghinolfi, Francis, et al.
Publicado: (1991)

Study of device parameters for analog IC design in a 1.2$\mu$m CMOS-SOI technology after 10 Mrad
por: Faccio, F, et al.
Publicado: (1992)

SCTA - A Rad-Hard BiCMOS Analogue Readout ASIC for the ATLAS Semiconductor Tracker
por: Anghinolfi, Francis, et al.
Publicado: (1996)

1994 status report RD9: a demonstrator analog signal processing circuit in a radiation hard SOI-CMOS technology
por: Heijne, Erik H M, et al.
Publicado: (1994)

An introduction to deep submicron CMOS for vertex applications
por: Campbell, M, et al.
Publicado: (2001)

Submicron CMOS technologies for high energy physics and space applications
por: Anelli, G, et al.
Publicado: (2001)

Analog sampling techniques in CMOS technology for future front ends
por: Anghinolfi, Francis, et al.
Publicado: (1991)

Analog design in deep submicron CMOS processes for LHC
por: Rivetti, A, et al.
Publicado: (1999)

Deep submicron CMOS technologies for the LHC experiments
por: Jarron, Pierre, et al.
Publicado: (1999)

Development of a CMOS SOI pixel detector
por: Ishino, Hirokazu, et al.
Publicado: (2007)

Total dose behavior of submicron and deep submicron CMOS technologies
por: Anelli, G, et al.
Publicado: (1997)

Monolothic CMOS front-end electronics with analog pipelining
por: Anghinolfi, Francis, et al.
Publicado: (1990)

ICON, a current mode preamplifier in CMOS technology for use with high-rate particle detectors
por: Anghinolfi, Francis, et al.
Publicado: (1991)

Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects
por: Anelli, G, et al.
Publicado: (1999)

HARP: hierarchical analog readout processor with analog pipelining in CMOS
por: Anghinolfi, Francis, et al.
Publicado: (1990)

Comparative study of the noise performance of bipolar and CMOS preamplifiers for tracker applications at the LHC
por: Jarron, Pierre, et al.
Publicado: (1995)

Development of integrated CMOS circuits and silicon pixel detectors in the CERN-LAA project: progress report 1988-1989
por: Anghinolfi, Francis, et al.
Publicado: (1989)

Embedded UV Sensors in CMOS SOI Technology
por: Yampolsky, Michael, et al.
Publicado: (2022)

DMILL, a mixed analog-digital radiation hard technology for high energy physics electronics: RD 29 status report, 1995
por: Abbon, P, et al.
Publicado: (1995)

Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures
por: Fourches, N T, et al.
Publicado: (1997)

Radiation tolerance beyond 10-mrad for a pixel readout chip in standard submicron CMOS
por: Snoeys, W, et al.
Publicado: (1998)

Low-voltage SOI CMOS VLSI devices and circuits
por: Kuo, James B, et al.
Publicado: (2004)

Noise characterization of a 0.25 $\mu$ m CMOS technology for the LHC experiments
por: Anelli, G, et al.
Publicado: (2001)

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology
por: Malits, Maria, et al.
Publicado: (2017)

A pixel readout chip for 10-30 MRad in standard 0.25 mu m CMOS
por: Campbell, M, et al.
Publicado: (1999)

Total dose and single event effects (SEE) in a $0.25-\mu-m$ CMOS technology
por: Faccio, F, et al.
Publicado: (1999)

Refractive Index Measurement Using SOI Photodiode with SP Antenna toward SOI CMOS-Compatible Integrated Optical Biosensor
por: Satoh, Hiroaki, et al.
Publicado: (2023)

L´usage de soi
por: Alexander, F.M
Publicado: (1985)

An SOI CMOS-Based Multi-Sensor MEMS Chip for Fluidic Applications †
por: Mansoor, Mohtashim, et al.
Publicado: (2016)

Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers
por: Dierickx, B, et al.
Publicado: (1993)

A low noise CMOS integrated signal processor for multi-element particle detectors
por: Heijne, Erik H M, et al.
Publicado: (1988)

LERB Workshop, 11-15 September 1995: panel discussion summaries
por: Bourgeois, F, et al.
Publicado: (1995)

Cannot write session to /tmp/vufind_sessions/sess_fgs5ko14ss14o9k34guehsel3c