Direct evidence for stability of tetrahedral interstitial Er in Si up to 900$^{\circ}$C

Conversion electron emission channeling from the isotope $^{167m}$Er (2.28 s), which is the decay product of radioactive $^{167}$Tm (9.25 d), offers a means of monitoring the lattice sites of Er in single crystals. We have used this method to determine the lattice location of $^{167m}$Er in Si directly following room temperature implantation of $^{167}$Tm, after subsequent annealing steps, and also in situ during annealing up to 900°C. Following the recovery of implantation damage around 600°C, about 90% of Er occupies near-tetrahedral interstitial sites in both FZ and CZ Si. While in FZ Si $^{167m}$Er was found to be stable on these sites even at 900°C, the tetrahedral Er fraction in CZ Si decreased considerably after annealing for 10 min at 800°C and above.