Cargando…
Total dose behavior of submicron and deep submicron CMOS technologies
Autores principales: | Anelli, G, Campbell, M, Dachs, C, Faccio, F, Giraldo, A, Heijne, Erik H M, Jarron, Pierre, Marchioro, A, Noah, E, Paccagnella, A, Signe, P M, Snoeys, W, Vleugels, K |
---|---|
Lenguaje: | eng |
Publicado: |
1997
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/349576 |
Ejemplares similares
-
Deep submicron CMOS technologies for the LHC experiments
por: Jarron, Pierre, et al.
Publicado: (1999) -
Submicron CMOS technologies for high energy physics and space applications
por: Anelli, G, et al.
Publicado: (2001) -
Total dose behaviour of commercial submicron VLSI technologies at low dose rate
por: Giraldo, A, et al.
Publicado: (1997) -
An introduction to deep submicron CMOS for vertex applications
por: Campbell, M, et al.
Publicado: (2001) -
Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects
por: Anelli, G, et al.
Publicado: (1999)