Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors

Various types of silicon monocrystals (epitaxial of different thickness, standard and oxygenated float-zone material) have been grown and processed with mesa and planar technologies to produce 5 ' 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properti...

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Detalles Bibliográficos
Autores principales: Casse, G L, Glaser, M, Grigoriev, E A, Lemeilleur, F, Ruzin, A, Sopko, B, Taffard, A C
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/350111
Descripción
Sumario:Various types of silicon monocrystals (epitaxial of different thickness, standard and oxygenated float-zone material) have been grown and processed with mesa and planar technologies to produce 5 ' 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find their correlation with the material type, the fabrication process and the radiation hardness.

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