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Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors
Various types of silicon monocrystals (epitaxial of different thickness, standard and oxygenated float-zone material) have been grown and processed with mesa and planar technologies to produce 5 ' 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properti...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1998
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/350111 |
| _version_ | 1780892195133325312 |
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| author | Casse, G L Glaser, M Grigoriev, E A Lemeilleur, F Ruzin, A Sopko, B Taffard, A C |
| author_facet | Casse, G L Glaser, M Grigoriev, E A Lemeilleur, F Ruzin, A Sopko, B Taffard, A C |
| author_sort | Casse, G L |
| collection | CERN |
| description | Various types of silicon monocrystals (epitaxial of different thickness, standard and oxygenated float-zone material) have been grown and processed with mesa and planar technologies to produce 5 ' 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find their correlation with the material type, the fabrication process and the radiation hardness. |
| id | cern-350111 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1998 |
| record_format | invenio |
| spelling | cern-3501112019-09-30T06:29:59Zhttp://cds.cern.ch/record/350111engCasse, G LGlaser, MGrigoriev, E ALemeilleur, FRuzin, ASopko, BTaffard, A CImpact of Mesa and Planar Processes on Radiation Hardness of Si DetectorsDetectors and Experimental TechniquesVarious types of silicon monocrystals (epitaxial of different thickness, standard and oxygenated float-zone material) have been grown and processed with mesa and planar technologies to produce 5 ' 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find their correlation with the material type, the fabrication process and the radiation hardness.CERN-ECP-97-009CERN-ECP-97-09CERN-ECP-97-9oai:cds.cern.ch:3501111998-01-13 |
| spellingShingle | Detectors and Experimental Techniques Casse, G L Glaser, M Grigoriev, E A Lemeilleur, F Ruzin, A Sopko, B Taffard, A C Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors |
| title | Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors |
| title_full | Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors |
| title_fullStr | Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors |
| title_full_unstemmed | Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors |
| title_short | Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors |
| title_sort | impact of mesa and planar processes on radiation hardness of si detectors |
| topic | Detectors and Experimental Techniques |
| url | http://cds.cern.ch/record/350111 |
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