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Impact of Mesa and Planar Processes on Radiation Hardness of Si Detectors
Various types of silicon monocrystals (epitaxial of different thickness, standard and oxygenated float-zone material) have been grown and processed with mesa and planar technologies to produce 5 ' 5 mm2 pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properti...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1998
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/350111 |