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Implantation doping and hydrogen passivation of GaN

Detalles Bibliográficos
Autores principales:	Burchard, A, Deicher, M, Forkel-Wirth, Doris, Haller, E E, Magerle, R, Prospero, A, Stötzler, A
Lenguaje:	eng
Publicado:	1997
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.4028/www.scientific.net/MSF.258-263.1099 http://cds.cern.ch/record/364301

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