Cargando…
Acceptor-hydrogen interaction in InAs
Autores principales: | Burchard, A, Correia, J G, Deicher, M, Forkel-Wirth, Doris, Magerle, R, Prospero, A, Stötzler, A |
---|---|
Lenguaje: | eng |
Publicado: |
1997
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.4028/www.scientific.net/MSF.258-263.1223 http://cds.cern.ch/record/364302 |
Ejemplares similares
-
Implantation doping and hydrogen passivation of GaN
por: Burchard, A, et al.
Publicado: (1997) -
Electric field gradients of acceptor-donor pairs in semiconductors
por: Burchard, A, et al.
Publicado: (1999) -
Microscopic Studies of the Hydrogen Passivation in n-type Silicon: A New Application of the 73As e--g PAC Technique
por: Correia, J G, et al.
Publicado: (1996) -
Creation of Ga$_{As}$ antisites in GaAs by transmutation of radioactive $^{71}$As$_{As}$ to stable $^{71}$Ga$_{As}$
por: Magerle, R, et al.
Publicado: (1997) -
First PAC studies on the hydrogen diffusion in III-V semiconductors
por: Burchard, A, et al.
Publicado: (1996)