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Thick film SOI technology: characteristics of devices and performance of circuits for high-energy physics at cryogenic temperatures

Detalles Bibliográficos
Autores principales:	Fourches, N T, Abbon, P, Chipaux, Rémi, Delagnes, E, Orsier, E, Pailler, P, Du Port de Pontcharra, J, Rouger, M, Sueur, M, Truche, R
Lenguaje:	eng
Publicado:	1997
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/S0168-9002(97)01032-2 http://cds.cern.ch/record/365111

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