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Study of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadrons

Detalles Bibliográficos
Autores principales: Grim, G P, Pellett, D E
Lenguaje:eng
Publicado: 1998
Materias:
Acceso en línea:http://cds.cern.ch/record/373307
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author Grim, G P
Pellett, D E
author_facet Grim, G P
Pellett, D E
author_sort Grim, G P
collection CERN
id cern-373307
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1998
record_format invenio
spelling cern-3733072019-09-30T06:29:59Zhttp://cds.cern.ch/record/373307engGrim, G PPellett, D EStudy of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadronsDetectors and Experimental TechniquesFERMILAB-CONF-98-196-Goai:cds.cern.ch:3733071998
spellingShingle Detectors and Experimental Techniques
Grim, G P
Pellett, D E
Study of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadrons
title Study of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadrons
title_full Study of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadrons
title_fullStr Study of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadrons
title_full_unstemmed Study of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadrons
title_short Study of radiation damage to Honeywell RICMOS-IV SOI transistors by charged hadrons
title_sort study of radiation damage to honeywell ricmos-iv soi transistors by charged hadrons
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/373307
work_keys_str_mv AT grimgp studyofradiationdamagetohoneywellricmosivsoitransistorsbychargedhadrons
AT pellettde studyofradiationdamagetohoneywellricmosivsoitransistorsbychargedhadrons