Scanning of irradiated silicon detectors using $\alpha$ particles and low energy protons

In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristi...

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Detalles Bibliográficos
Autores principales: Casse, G L, Dolezal, Z, Glaser, M, Kohout, Z, Konícek, J, Lemeilleur, F, Leroy, C, Linhart, V, Mares, J J, Pospísil, S, Roy, P, Sopko, B, Sinor, M, Svejda, J, Vorobel, V, Wilhelm, I
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(99)00591-4
http://cds.cern.ch/record/390616
Descripción
Sumario:In a spectroscopic study of non-irradiated and proton-irradiated silicon diodes, the detectors were illuminated from the front side and from the rear side by various alpha particle sources (mainly ThC') and by monoenergetic protons with energies from 1.0 to 2.5~MeV. Their response characteristics have been studied as a function of the incoming particle energy and the applied bias voltage. The charge collection efficiency was determined as a function of fluence

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