Charge collection efficiency and resolution of an irradiated double sided silicon microstrip detector operated at cryogenic temperatures

The paper presents results on the measurements of the cluster shapes, resolution and charge collection effiency of a double sided silicon microstrrip detector after irradiation with 24 GeV protons to a uence of 3.5 x 10^{14} p=cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the "Lazarus effect", can be related to similar recent observations on diode behaviour.