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Effect of a Biased Probe on the Afterglow Operation of an ECR4 Ion Source
Various experiments have been performed on a 14.5 GHz ECR4 in order to improve the ion yield. The source runs in pulsed afterglow mode, and provides currents ~120 emA of Pb27+ to the CERN Heavy Ion Facility on an operational basis. In the search for higher beam intensities, the effects of a pulsed b...
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
1999
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1063/1.1150314 http://cds.cern.ch/record/405623 |
Sumario: | Various experiments have been performed on a 14.5 GHz ECR4 in order to improve the ion yield. The source runs in pulsed afterglow mode, and provides currents ~120 emA of Pb27+ to the CERN Heavy Ion Facility on an operational basis. In the search for higher beam intensities, the effects of a pulsed biased disk on axis at the injection side were investigated with different pulse timing and voltage settings. No proof for absolute higher intensities was seen for any of these modifications. However, the yield from a poorly tuned/low-performing source could be improved and the extracted pulse was less noisy with bias voltage applied. The fast response on the bias implies that increases/decreases are not due to ionisation processes. A good tune for high yield of high charge states during the afterglow coincides with a high plasma potential. |
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