Cargando…
Study of the charge multiplication phenomenon is silicon epitaxial detector
Autores principales: | Sobolev, Yu G, Kushniruk, V F, Bialkowska, E, Khlebnikov, S Yu, Penionzhkevich, Yu E, Trzaska, W H |
---|---|
Lenguaje: | eng |
Publicado: |
1999
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/407945 |
Ejemplares similares
-
Heavy charged particle detectors based on high resistivity epitaxial silicon layers
por: Kushniruk, V F, et al.
Publicado: (1999) -
A look at the phenomenon of charge multiplication in silicon radiation detector within the concept of dynamic focussing of the electric field
por: Tsyganov, Yu S, et al.
Publicado: (1995) -
Lithium ion irradiation effects on epitaxial silicon detectors
por: Candelori, A, et al.
Publicado: (2004) -
Charge multiplication in silicon radiation detectors under dense irradiation
por: Heijne, Erik H M, et al.
Publicado: (1977) -
Epitaxial silicon detectors for particle tracking--Radiation tolerance at extreme hadron fluences
por: Lindstrom, Gunnar, et al.
Publicado: (2006)