Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

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In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ~4*10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distingui...

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Detalles Bibliográficos
Autores principales: Casagrande, L, Barnett, B M, Bartalini, P, Bell, W H, Borer, K, Bowcock, T J V, Buytaert, J, Chochula, P, Collins, P, Da Vià, C, Dijkstra, H, Dormond, O, Esposito, A P, Frei, R, Granata, V, Janos, S, Konorov, I, Lourenço, C, Niinikoski, T O, Pagano, S, Palmieri, V G, Parkes, C, Paul, S, Pretzl, Klaus P, Ruf, T, Ruggiero, G, Saladino, S, Schmitt, L, Smith, K, Sonderegger, P, Stavitski, I, Steele, D, Vitobello, F
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/23.775519
http://cds.cern.ch/record/409253
Descripción
Sumario:In this work we show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ~4*10/sup 14/ p/cm/sup 2/, no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T<120 K. Besides confirming the previously observed `Lazarus effect' in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments.

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