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Diffusion in intrinsic and highly doped III-V semiconductors

Detalles Bibliográficos
Autores principales:	Bösker, G, Pöpping, J, Stolwijk, N, Mehrer, H, Burchard, A
Lenguaje:	eng
Publicado:	1997
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/409317

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