Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated...

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Detalles Bibliográficos
Autores principales: Da Vià, C, Bell, W.H., Berglund, P., Borchi, E., Borer, K., Bruzzi, Mara, Buontempo, S., Casagrande, L., Chapuy, S., Cindro, V, Dimcovski, Zlatomir, D'Ambrosio, N, de Boer, Wim, Dezillie, B., Esposito, A., Granata, V., Grigoriev, E., Heijne, E., Heising, S., Janos, S., Koivuniemi, J., Konorov, I., Li, Z., Lourenço, C., Mikuz, M., Niinikoski, T., Pagano, S., Palmieri, V., Paul, S., Pirollo, S., Pretzl, K., Ropotar, I., Ruggiero, G, Salmi, J., Seppä, H., Suni, I., Smith, K., Sonderegger, P., Valtonen, M., Zavrtanik, M.
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/NSSMIC.1998.775148
http://cds.cern.ch/record/409712
Descripción
Sumario:The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).

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