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Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated...
| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/NSSMIC.1998.775148 http://cds.cern.ch/record/409712 |
| _version_ | 1780894525067100160 |
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| author | Da Vià, C Bell, W.H. Berglund, P. Borchi, E. Borer, K. Bruzzi, Mara Buontempo, S. Casagrande, L. Chapuy, S. Cindro, V Dimcovski, Zlatomir D'Ambrosio, N de Boer, Wim Dezillie, B. Esposito, A. Granata, V. Grigoriev, E. Heijne, E. Heising, S. Janos, S. Koivuniemi, J. Konorov, I. Li, Z. Lourenço, C. Mikuz, M. Niinikoski, T. Pagano, S. Palmieri, V. Paul, S. Pirollo, S. Pretzl, K. Ropotar, I. Ruggiero, G Salmi, J. Seppä, H. Suni, I. Smith, K. Sonderegger, P. Valtonen, M. Zavrtanik, M. |
| author_facet | Da Vià, C Bell, W.H. Berglund, P. Borchi, E. Borer, K. Bruzzi, Mara Buontempo, S. Casagrande, L. Chapuy, S. Cindro, V Dimcovski, Zlatomir D'Ambrosio, N de Boer, Wim Dezillie, B. Esposito, A. Granata, V. Grigoriev, E. Heijne, E. Heising, S. Janos, S. Koivuniemi, J. Konorov, I. Li, Z. Lourenço, C. Mikuz, M. Niinikoski, T. Pagano, S. Palmieri, V. Paul, S. Pirollo, S. Pretzl, K. Ropotar, I. Ruggiero, G Salmi, J. Seppä, H. Suni, I. Smith, K. Sonderegger, P. Valtonen, M. Zavrtanik, M. |
| author_sort | Da Vià, C |
| collection | CERN |
| description | The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs). |
| id | cern-409712 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1999 |
| record_format | invenio |
| spelling | cern-4097122019-09-30T06:29:59Zdoi:10.1109/NSSMIC.1998.775148http://cds.cern.ch/record/409712engDa Vià, CBell, W.H.Berglund, P.Borchi, E.Borer, K.Bruzzi, MaraBuontempo, S.Casagrande, L.Chapuy, S.Cindro, VDimcovski, ZlatomirD'Ambrosio, Nde Boer, WimDezillie, B.Esposito, A.Granata, V.Grigoriev, E.Heijne, E.Heising, S.Janos, S.Koivuniemi, J.Konorov, I.Li, Z.Lourenço, C.Mikuz, M.Niinikoski, T.Pagano, S.Palmieri, V.Paul, S.Pirollo, S.Pretzl, K.Ropotar, I.Ruggiero, GSalmi, J.Seppä, H.Suni, I.Smith, K.Sonderegger, P.Valtonen, M.Zavrtanik, M.Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperaturesDetectors and Experimental TechniquesThe charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to $2 \times 10^{15} \rm{n/cm}^2$, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).oai:cds.cern.ch:4097121999 |
| spellingShingle | Detectors and Experimental Techniques Da Vià, C Bell, W.H. Berglund, P. Borchi, E. Borer, K. Bruzzi, Mara Buontempo, S. Casagrande, L. Chapuy, S. Cindro, V Dimcovski, Zlatomir D'Ambrosio, N de Boer, Wim Dezillie, B. Esposito, A. Granata, V. Grigoriev, E. Heijne, E. Heising, S. Janos, S. Koivuniemi, J. Konorov, I. Li, Z. Lourenço, C. Mikuz, M. Niinikoski, T. Pagano, S. Palmieri, V. Paul, S. Pirollo, S. Pretzl, K. Ropotar, I. Ruggiero, G Salmi, J. Seppä, H. Suni, I. Smith, K. Sonderegger, P. Valtonen, M. Zavrtanik, M. Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures |
| title | Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures |
| title_full | Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures |
| title_fullStr | Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures |
| title_full_unstemmed | Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures |
| title_short | Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures |
| title_sort | charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1109/NSSMIC.1998.775148 http://cds.cern.ch/record/409712 |
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