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Radiation hardening of silicon detectors
The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current and evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard,...
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| Lenguaje: | eng |
| Publicado: |
1999
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| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00436-2 http://cds.cern.ch/record/410817 |
| _version_ | 1780894591856148480 |
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| author | Lemeilleur, F |
| author_facet | Lemeilleur, F |
| author_sort | Lemeilleur, F |
| collection | CERN |
| description | The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current and evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented. (15 refs). |
| id | cern-410817 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1999 |
| record_format | invenio |
| spelling | cern-4108172019-09-30T06:29:59Zdoi:10.1016/S0168-9002(99)00436-2http://cds.cern.ch/record/410817engLemeilleur, FRadiation hardening of silicon detectorsDetectors and Experimental TechniquesThe radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current and evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard, float-zone silicon containing various atomic impurities and from epitaxial silicon materials. Some recent results concerning their radiation hardness are presented. (15 refs).oai:cds.cern.ch:4108171999 |
| spellingShingle | Detectors and Experimental Techniques Lemeilleur, F Radiation hardening of silicon detectors |
| title | Radiation hardening of silicon detectors |
| title_full | Radiation hardening of silicon detectors |
| title_fullStr | Radiation hardening of silicon detectors |
| title_full_unstemmed | Radiation hardening of silicon detectors |
| title_short | Radiation hardening of silicon detectors |
| title_sort | radiation hardening of silicon detectors |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/S0168-9002(99)00436-2 http://cds.cern.ch/record/410817 |
| work_keys_str_mv | AT lemeilleurf radiationhardeningofsilicondetectors |