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Radiation hardening of silicon detectors
The radiation hardness of high grade silicon detectors is summarized in terms of an increase of the diode reverse current and evolution of the full depletion voltage and charge collection efficiency. With the aim of improving their radiation tolerance, detectors have been produced from non-standard,...
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| Lenguaje: | eng |
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1999
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| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(99)00436-2 http://cds.cern.ch/record/410817 |
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