Electric field gradients of acceptor-donor pairs in semiconductors

The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive accepto...

Descripción completa

Detalles Bibliográficos
Autores principales: Burchard, A, Deicher, M, Fedosseev, V, Forkel-Wirth, Doris, Magerle, R, Mishin, V I, Steiner, D, Stötzler, A, Weissenborn, R, Wichert, T
Lenguaje:eng
Publicado: 1999
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1023/A:1017028918823
http://cds.cern.ch/record/419568
Descripción
Sumario:The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive acceptors (/sup 111/In, /sup 111m/Cd, /sup 117/Cd) has been observed. The formation of Cd-hydrogen pairs using either /sup 111m/Cd or /sup 117/Cd is discussed for GaAs, InP, and In As. (13 refs).

Ejemplares similares