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Electric field gradients of acceptor-donor pairs in semiconductors
The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive accepto...
| Autores principales: | , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1023/A:1017028918823 http://cds.cern.ch/record/419568 |
| _version_ | 1780894800453566464 |
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| author | Burchard, A Deicher, M Fedosseev, V Forkel-Wirth, Doris Magerle, R Mishin, V I Steiner, D Stötzler, A Weissenborn, R Wichert, T |
| author_facet | Burchard, A Deicher, M Fedosseev, V Forkel-Wirth, Doris Magerle, R Mishin, V I Steiner, D Stötzler, A Weissenborn, R Wichert, T |
| author_sort | Burchard, A |
| collection | CERN |
| description | The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive acceptors (/sup 111/In, /sup 111m/Cd, /sup 117/Cd) has been observed. The formation of Cd-hydrogen pairs using either /sup 111m/Cd or /sup 117/Cd is discussed for GaAs, InP, and In As. (13 refs). |
| id | cern-419568 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 1999 |
| record_format | invenio |
| spelling | cern-4195682019-09-30T06:29:59Zdoi:10.1023/A:1017028918823http://cds.cern.ch/record/419568engBurchard, ADeicher, MFedosseev, VForkel-Wirth, DorisMagerle, RMishin, V ISteiner, DStötzler, AWeissenborn, RWichert, TElectric field gradients of acceptor-donor pairs in semiconductorsCondensed MatterThe interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive acceptors (/sup 111/In, /sup 111m/Cd, /sup 117/Cd) has been observed. The formation of Cd-hydrogen pairs using either /sup 111m/Cd or /sup 117/Cd is discussed for GaAs, InP, and In As. (13 refs).oai:cds.cern.ch:4195681999 |
| spellingShingle | Condensed Matter Burchard, A Deicher, M Fedosseev, V Forkel-Wirth, Doris Magerle, R Mishin, V I Steiner, D Stötzler, A Weissenborn, R Wichert, T Electric field gradients of acceptor-donor pairs in semiconductors |
| title | Electric field gradients of acceptor-donor pairs in semiconductors |
| title_full | Electric field gradients of acceptor-donor pairs in semiconductors |
| title_fullStr | Electric field gradients of acceptor-donor pairs in semiconductors |
| title_full_unstemmed | Electric field gradients of acceptor-donor pairs in semiconductors |
| title_short | Electric field gradients of acceptor-donor pairs in semiconductors |
| title_sort | electric field gradients of acceptor-donor pairs in semiconductors |
| topic | Condensed Matter |
| url | https://dx.doi.org/10.1023/A:1017028918823 http://cds.cern.ch/record/419568 |
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