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Electric field gradients of acceptor-donor pairs in semiconductors

The interaction between substitutional and interstitial donors and single or double acceptors in Si, GaAs, InP, and InAs has been studied by perturbed angular correlation spectroscopy (PAC). For the case of Si, complex formation between substitutional donors (As, P) and different radioactive accepto...

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Detalles Bibliográficos
Autores principales:	Burchard, A, Deicher, M, Fedosseev, V, Forkel-Wirth, Doris, Magerle, R, Mishin, V I, Steiner, D, Stötzler, A, Weissenborn, R, Wichert, T
Lenguaje:	eng
Publicado:	1999
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1023/A:1017028918823 http://cds.cern.ch/record/419568

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