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Semiconductors with structurally determined vacancies: PAC studies

Ternary semiconductors of type Square Operator A/sup II/B/sub 2//sup III/C/sub 4//sup VI/ with an ordered array of vacancies were investigated by PAC. Thereby the six probes /sup 111m/Cd, /sup 117/Cd (/sup 117/In), /sup 111/In(/sup 111/Cd), /sup 111/Ag(/sup 111/Cd), /sup 77/Br(/sup 77/Se) and /sup 7...

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Detalles Bibliográficos
Autores principales: Dietrich, M, Degering, D, Kortus, J, Unterricker, S, Deicher, M, Burchard, A, Magerle, R
Lenguaje:eng
Publicado: 1999
Materias:
Acceso en línea:https://dx.doi.org/10.1023/A:1017068600167
http://cds.cern.ch/record/419569
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author Dietrich, M
Degering, D
Kortus, J
Unterricker, S
Deicher, M
Burchard, A
Magerle, R
author_facet Dietrich, M
Degering, D
Kortus, J
Unterricker, S
Deicher, M
Burchard, A
Magerle, R
author_sort Dietrich, M
collection CERN
description Ternary semiconductors of type Square Operator A/sup II/B/sub 2//sup III/C/sub 4//sup VI/ with an ordered array of vacancies were investigated by PAC. Thereby the six probes /sup 111m/Cd, /sup 117/Cd (/sup 117/In), /sup 111/In(/sup 111/Cd), /sup 111/Ag(/sup 111/Cd), /sup 77/Br(/sup 77/Se) and /sup 77/Kr(/sup 77/Br) were applied. The positions of the different probes are determined and the corresponding electric field gradients by the WIEN 95 code calculated. By /sup 111/Ag(/sup 111/Cd)-probes the vacancies could be substituted. The electronic charge density distributions are discussed. At elevated temperatures the substances show order- disorder transitions. As compared to the X-ray diffraction patterns the beginning of disorder is observed by PAC at distinctly lower temperatures. (7 refs).
id cern-419569
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
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spelling cern-4195692019-09-30T06:29:59Zdoi:10.1023/A:1017068600167http://cds.cern.ch/record/419569engDietrich, MDegering, DKortus, JUnterricker, SDeicher, MBurchard, AMagerle, RSemiconductors with structurally determined vacancies: PAC studiesCondensed MatterTernary semiconductors of type Square Operator A/sup II/B/sub 2//sup III/C/sub 4//sup VI/ with an ordered array of vacancies were investigated by PAC. Thereby the six probes /sup 111m/Cd, /sup 117/Cd (/sup 117/In), /sup 111/In(/sup 111/Cd), /sup 111/Ag(/sup 111/Cd), /sup 77/Br(/sup 77/Se) and /sup 77/Kr(/sup 77/Br) were applied. The positions of the different probes are determined and the corresponding electric field gradients by the WIEN 95 code calculated. By /sup 111/Ag(/sup 111/Cd)-probes the vacancies could be substituted. The electronic charge density distributions are discussed. At elevated temperatures the substances show order- disorder transitions. As compared to the X-ray diffraction patterns the beginning of disorder is observed by PAC at distinctly lower temperatures. (7 refs).oai:cds.cern.ch:4195691999
spellingShingle Condensed Matter
Dietrich, M
Degering, D
Kortus, J
Unterricker, S
Deicher, M
Burchard, A
Magerle, R
Semiconductors with structurally determined vacancies: PAC studies
title Semiconductors with structurally determined vacancies: PAC studies
title_full Semiconductors with structurally determined vacancies: PAC studies
title_fullStr Semiconductors with structurally determined vacancies: PAC studies
title_full_unstemmed Semiconductors with structurally determined vacancies: PAC studies
title_short Semiconductors with structurally determined vacancies: PAC studies
title_sort semiconductors with structurally determined vacancies: pac studies
topic Condensed Matter
url https://dx.doi.org/10.1023/A:1017068600167
http://cds.cern.ch/record/419569
work_keys_str_mv AT dietrichm semiconductorswithstructurallydeterminedvacanciespacstudies
AT degeringd semiconductorswithstructurallydeterminedvacanciespacstudies
AT kortusj semiconductorswithstructurallydeterminedvacanciespacstudies
AT unterrickers semiconductorswithstructurallydeterminedvacanciespacstudies
AT deicherm semiconductorswithstructurallydeterminedvacanciespacstudies
AT burcharda semiconductorswithstructurallydeterminedvacanciespacstudies
AT magerler semiconductorswithstructurallydeterminedvacanciespacstudies