Design and test of radiation hard $p^{+}n$ silicon strip detectors for the ATLAS SCT

Strip detectors covering radiation hardness and large-scale production ability are developed and produced for the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Switzerland). Capacitively coupled p/sup +/n detectors (p-type strips on n-type substrate) were developed with implanted bias...

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Detalles Bibliográficos
Autores principales: Andricek, L, Hauff, D, Kemmer, J, Koffeman, E, Lukewille, P, Lutz, Gerhard, Moser, H G, Richter, R H, Rohe, T, Soltau, H, Viehl, A
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(99)00901-8
http://cds.cern.ch/record/427345
Descripción
Sumario:Strip detectors covering radiation hardness and large-scale production ability are developed and produced for the ATLAS experiment at the Large Hadron Collider (LHC) at CERN (Switzerland). Capacitively coupled p/sup +/n detectors (p-type strips on n-type substrate) were developed with implanted bias resistors in order to simplify the detector processing addressing the requirements of large-scale production. The detectors were irradiated with 24 GeV protons up to 3*10/sup 14/ cm/sup -2/ in order to simulate a 10 years operation scenario at LHC. The presented static and signal measurements demonstrate the function of the device concept before and after irradiation. (18 refs).

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