High-voltage performance of silicon detectors irradiated under bias

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The CMS preshower detector contains 16 m/sup 2/ of silicon. The silicon sensors' design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias a...

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Detalles Bibliográficos
Autores principales: Bloch, P, Ciasnohova, A, Jading, Y, Peisert, Anna, Golutvin, L, Cheremuhin, A E, Sergeev, S, Zamiatin, N I, Dauphin, G, Safieh, J
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(99)00904-3
http://cds.cern.ch/record/427348
Descripción
Sumario:The CMS preshower detector contains 16 m/sup 2/ of silicon. The silicon sensors' design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias and at low temperature. Their electrical parameters and their response to alpha and beta particles were measured. The charge collection efficiency attains a plateau at around 300 V. The irradiation set-up and the results of the measurements are presented in this paper. (17 refs).

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