Readout of non-irradiated and irradiated strip detectors with fast analogue electronics

Silicon microstrip detectors with 50 mu m readout pitch were connected to fast LHC-type analogue readout electronics (DMILL SCT32A) and their performance evaluated before and after irradiation. The p-type strips with a length of 4 cm were fabricated on high- resistivity n-bulk wafers by CSEM. Fast neutrons from the TRIGA research reactor in Ljubljana were used to irradiate detectors to two different fluences: 4.5*10/sup 13/ and 1.5*10/sup 14//cm/sup 2/ 1 MeV neutron equivalent non-ionizing energy loss. A /sup 90/Sr beta source setup was used for detector performance measurements. Most of the observed signal/noise degradation after irradiation could be attributed to the signal loss. Around 82Xharge collection efficiency was measured at higher fluence 100 V above full depletion voltage as determined with C-V measurements. Measurements were performed during annealing and reverse annealing of effective dopant concentration. (9 refs).