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Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

Using the radioactive acceptor $^{111}\!$Ag for perturbed $\gamma$-$\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acc...

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Detalles Bibliográficos
Autores principales: Wolf, H, Filz, T, Ostheimer, V, Hamann, J, Lany, S, Wichert, T
Lenguaje:eng
Publicado: 2000
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0022-0248(00)00269-4
http://cds.cern.ch/record/427617
Descripción
Sumario:Using the radioactive acceptor $^{111}\!$Ag for perturbed $\gamma$-$\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.