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Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum
Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0920-5632(99)00618-0 http://cds.cern.ch/record/428706 |