Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to $3*10^{14} pcm^{-2}$

P-in-n silicon microstrip prototype detectors for the ATLAS experiment at CERN have been designed and manufactured by Hamamatsu Photonics. Detectors were irradiated at the CERN Proton Synchrotron facility to a fluence of 3*10/sup 14/ pcm/sup -2/, corresponding to the total fluence anticipated after ten years of operation in the ATLAS semiconductor tracker. They were subsequently annealed for 7 days at 25 degrees C in order to reach the end of the beneficial annealing period and hence the minimum in depletion voltage. The characteristics of 4 different detector designs have been evaluated. The pre-irradiation behaviour of all detectors is consistent and well within the specifications for ATLAS detectors. Similarly, the post- irradiation and anneal performance for all detectors shows excellent behaviour. This is in terms of both the leakage current characteristics and the signal and noise performance as determined from LHC speed readout electronics. Tile detector characteristics are such that operation within the maximum operating voltage envisaged for ATLAS is possible. (10 refs).