Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to $3*10^{14} pcm^{-2}$

P-in-n silicon microstrip prototype detectors for the ATLAS experiment at CERN have been designed and manufactured by Hamamatsu Photonics. Detectors were irradiated at the CERN Proton Synchrotron facility to a fluence of 3*10/sup 14/ pcm/sup -2/, corresponding to the total fluence anticipated after...

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Detalles Bibliográficos
Autores principales: Morgan, D, Buttar, C M, Carter, J R, Dawson, I, Hara, K, Harper, R, Iwata, Y, Kohriki, T, Kondo, T, Ohsugi, T, Robinson, D, Shimojima, M, Terada, S, Unno, Y
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1007/BF03185590
http://cds.cern.ch/record/430798

Internet

https://dx.doi.org/10.1007/BF03185590
http://cds.cern.ch/record/430798

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