Cargando…
Noise behaviour of semi-insulating GaAs particle detectors before and after proton irradiation
Charge signal and noise were studied in non-irradiated and irradiated Schottky barrier, circular pad detectors of 100 mu m thick made on semi-insulating gallium arsenide at Alenia S.p.A., as a function of the reverse bias (V/sub a/), the shaping time ( tau ) and the fluence (f), for minimum ionising...
Autores principales: | Biggeri, U, Canali, C M, Lanzieri, C, Leroy, C, Nava, F, Vanni, P |
---|---|
Lenguaje: | eng |
Publicado: |
1999
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/S0920-5632(99)00598-8 http://cds.cern.ch/record/433203 |
Ejemplares similares
-
Electric field and plasma effects on proton-irradiated GaAs detector performance
por: Nava, F, et al.
Publicado: (1998) -
Semi-insulating gaas
por: Willardson, RK, et al.
Publicado: (1984) -
Influence of electron traps on charge-collection efficiency in GaAs radiation detectors
por: Nava, F, et al.
Publicado: (1994) -
Effects of irradiation on the noise and DC performance of transistors and preamplifiers based on GaAs technology
por: Karpinski, W, et al.
Publicado: (1995) -
Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
por: Bates, R.L., et al.
Publicado: (1997)