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SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC

Detalles Bibliográficos
Autores principales: Faccio, F, Kloukinas, Kostas C, Magazzù, G, Marchioro, A
Lenguaje:eng
Publicado: CERN 1999
Materias:
Acceso en línea:https://dx.doi.org/10.5170/CERN-1999-009.571
http://cds.cern.ch/record/437160
_version_ 1780895467132944384
author Faccio, F
Kloukinas, Kostas C
Magazzù, G
Marchioro, A
author_facet Faccio, F
Kloukinas, Kostas C
Magazzù, G
Marchioro, A
author_sort Faccio, F
collection CERN
id cern-437160
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
publisher CERN
record_format invenio
spelling cern-4371602019-09-30T06:29:59Zdoi:10.5170/CERN-1999-009.571http://cds.cern.ch/record/437160engFaccio, FKloukinas, Kostas CMagazzù, GMarchioro, ASEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHCDetectors and Experimental TechniquesCERNCERN-OPEN-2000-123oai:cds.cern.ch:4371601999-10-29
spellingShingle Detectors and Experimental Techniques
Faccio, F
Kloukinas, Kostas C
Magazzù, G
Marchioro, A
SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
title SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
title_full SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
title_fullStr SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
title_full_unstemmed SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
title_short SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
title_sort seu effects in registers and in a dual-ported static ram designed in a 0.25 $\mu$m cmos technology for applications in the lhc
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.5170/CERN-1999-009.571
http://cds.cern.ch/record/437160
work_keys_str_mv AT facciof seueffectsinregistersandinadualportedstaticramdesignedina025mumcmostechnologyforapplicationsinthelhc
AT kloukinaskostasc seueffectsinregistersandinadualportedstaticramdesignedina025mumcmostechnologyforapplicationsinthelhc
AT magazzug seueffectsinregistersandinadualportedstaticramdesignedina025mumcmostechnologyforapplicationsinthelhc
AT marchioroa seueffectsinregistersandinadualportedstaticramdesignedina025mumcmostechnologyforapplicationsinthelhc