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SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
CERN
1999
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-1999-009.571 http://cds.cern.ch/record/437160 |
_version_ | 1780895467132944384 |
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author | Faccio, F Kloukinas, Kostas C Magazzù, G Marchioro, A |
author_facet | Faccio, F Kloukinas, Kostas C Magazzù, G Marchioro, A |
author_sort | Faccio, F |
collection | CERN |
id | cern-437160 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 1999 |
publisher | CERN |
record_format | invenio |
spelling | cern-4371602019-09-30T06:29:59Zdoi:10.5170/CERN-1999-009.571http://cds.cern.ch/record/437160engFaccio, FKloukinas, Kostas CMagazzù, GMarchioro, ASEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHCDetectors and Experimental TechniquesCERNCERN-OPEN-2000-123oai:cds.cern.ch:4371601999-10-29 |
spellingShingle | Detectors and Experimental Techniques Faccio, F Kloukinas, Kostas C Magazzù, G Marchioro, A SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC |
title | SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC |
title_full | SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC |
title_fullStr | SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC |
title_full_unstemmed | SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC |
title_short | SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC |
title_sort | seu effects in registers and in a dual-ported static ram designed in a 0.25 $\mu$m cmos technology for applications in the lhc |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.5170/CERN-1999-009.571 http://cds.cern.ch/record/437160 |
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