Cargando…
SEU effects in registers and in a dual-ported static RAM designed in a 0.25 $\mu$m CMOS technology for applications in the LHC
Autores principales: | Faccio, F, Kloukinas, Kostas C, Magazzù, G, Marchioro, A |
---|---|
Lenguaje: | eng |
Publicado: |
CERN
1999
|
Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-1999-009.571 http://cds.cern.ch/record/437160 |
Ejemplares similares
-
A configurable radiation tolerant dual-ported static RAM macro, designed in a 0.25 $\mu$m CMOS technology for applications in the LHC environment
por: Kloukinas, Kostas C, et al.
Publicado: (2002) -
Single event effects in static and dynamic registers in a $0.25-\mu-m$ CMOS technology
por: Faccio, F, et al.
Publicado: (1999) -
Total dose and single event effects (SEE) in a $0.25-\mu-m$ CMOS technology
por: Faccio, F, et al.
Publicado: (1999) -
TID and SEU performance of a commercial 013 $\mu$ m CMOS technology
por: Hänsler, Kurt, et al.
Publicado: (2004) -
A 40 MHz clock and trigger recovery circuit for the CMS tracker fabricated in a 0.25 $\mu m$ CMOS technology and using a self calibration technique
por: Placidi, P, et al.
Publicado: (1999)