The electronic configuration of substitutional Fe in silicon

Ion implantations of radioactive /sup 57/Mn/sup +/ into differently doped silicon single crystals held at 300-600 K have been utilized for /sup 57/Fe Mossbauer studies of interstitial and substitutional Fe. Site and charge state assignments have been made on the basis of the determined hyperfine int...

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Detalles Bibliográficos
Autores principales: Weyer, G, Burchard, A, Fanciulli, M, Fedosseev, V, Gunnlaugsson, H P, Mishin, V I, Sielemann, R
Lenguaje:eng
Publicado: 1999
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1016/S0921-4526(99)00478-0
http://cds.cern.ch/record/438240
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author Weyer, G
Burchard, A
Fanciulli, M
Fedosseev, V
Gunnlaugsson, H P
Mishin, V I
Sielemann, R
author_facet Weyer, G
Burchard, A
Fanciulli, M
Fedosseev, V
Gunnlaugsson, H P
Mishin, V I
Sielemann, R
author_sort Weyer, G
collection CERN
description Ion implantations of radioactive /sup 57/Mn/sup +/ into differently doped silicon single crystals held at 300-600 K have been utilized for /sup 57/Fe Mossbauer studies of interstitial and substitutional Fe. Site and charge state assignments have been made on the basis of the determined hyperfine interaction parameters and Debye temperatures. Substantial fractions of substitutional /sup 57/Mn probe atoms are proposed to occur due to annealing reactions. This site is maintained in the subsequent decay to /sup 57/Fe by <or=50% of the /sup 57/Fe atoms, the remainder is displaced by recoil effects into interstitial sites. (19 refs).
id cern-438240
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-4382402019-09-30T06:29:59Zdoi:10.1016/S0921-4526(99)00478-0http://cds.cern.ch/record/438240engWeyer, GBurchard, AFanciulli, MFedosseev, VGunnlaugsson, H PMishin, V ISielemann, RThe electronic configuration of substitutional Fe in siliconCondensed MatterIon implantations of radioactive /sup 57/Mn/sup +/ into differently doped silicon single crystals held at 300-600 K have been utilized for /sup 57/Fe Mossbauer studies of interstitial and substitutional Fe. Site and charge state assignments have been made on the basis of the determined hyperfine interaction parameters and Debye temperatures. Substantial fractions of substitutional /sup 57/Mn probe atoms are proposed to occur due to annealing reactions. This site is maintained in the subsequent decay to /sup 57/Fe by <or=50% of the /sup 57/Fe atoms, the remainder is displaced by recoil effects into interstitial sites. (19 refs).oai:cds.cern.ch:4382401999
spellingShingle Condensed Matter
Weyer, G
Burchard, A
Fanciulli, M
Fedosseev, V
Gunnlaugsson, H P
Mishin, V I
Sielemann, R
The electronic configuration of substitutional Fe in silicon
title The electronic configuration of substitutional Fe in silicon
title_full The electronic configuration of substitutional Fe in silicon
title_fullStr The electronic configuration of substitutional Fe in silicon
title_full_unstemmed The electronic configuration of substitutional Fe in silicon
title_short The electronic configuration of substitutional Fe in silicon
title_sort electronic configuration of substitutional fe in silicon
topic Condensed Matter
url https://dx.doi.org/10.1016/S0921-4526(99)00478-0
http://cds.cern.ch/record/438240
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